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Surface and interface morphology optimization in MOCVD growth of DH-HEMT structures on 200 mm Si(111) substrates

Date

2014-08
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dc.contributor.authorZhao, Ming
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorLiang, Hu
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorVaesen, Inge
dc.contributor.authorMoussa, Alain
dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLanger, Robert
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorVaesen, Inge
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-22T08:56:54Z
dc.date.available2021-10-22T08:56:54Z
dc.date.issued2014-08
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24888
dc.source.beginpageTuGP5
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate24/08/2014
dc.source.conferencelocationWroclaw Poland
dc.title

Surface and interface morphology optimization in MOCVD growth of DH-HEMT structures on 200 mm Si(111) substrates

dc.typeMeeting abstract
dspace.entity.typePublication
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