Publication:
Switching layer optimization in Co-based CBRAM for >10 5 memory window in sub-100 µA regime
| dc.contributor.author | Cho, Yongjun | |
| dc.contributor.author | Kang, Bo Soo | |
| dc.contributor.author | Kumbhare, Pankaj | |
| dc.contributor.author | Delhougne, Romain | |
| dc.contributor.author | Nyns, Laura | |
| dc.contributor.author | Mao, Ming | |
| dc.contributor.author | Goux, Ludovic | |
| dc.contributor.author | Kar, Gouri Sankar | |
| dc.contributor.author | Belmonte, Attilio | |
| dc.contributor.imecauthor | Kumbhare, Pankaj | |
| dc.contributor.imecauthor | Delhougne, Romain | |
| dc.contributor.imecauthor | Nyns, Laura | |
| dc.contributor.imecauthor | Mao, Ming | |
| dc.contributor.imecauthor | Goux, Ludovic | |
| dc.contributor.imecauthor | Kar, Gouri Sankar | |
| dc.contributor.imecauthor | Belmonte, Attilio | |
| dc.contributor.orcidimec | Delhougne, Romain::0009-0009-0129-709X | |
| dc.contributor.orcidimec | Nyns, Laura::0000-0001-8220-870X | |
| dc.contributor.orcidimec | Goux, Ludovic::0000-0002-1276-2278 | |
| dc.contributor.orcidimec | Belmonte, Attilio::0000-0002-3947-1948 | |
| dc.date.accessioned | 2025-04-10T12:30:03Z | |
| dc.date.available | 2024-11-10T17:03:54Z | |
| dc.date.available | 2025-04-10T12:30:03Z | |
| dc.date.issued | 2024 | |
| dc.description.wosFundingText | This research was supported by the MOTIE (Ministry of Trade, Industry, and Energy) in Korea, under the Fostering Global Talents for Innovative Growth Program (P0008745) supervised by the Korea Institute for Advancement of Technology (MAT) . This project has also received funding from the Electronic Component Systems for European Leadership Joint undertaking under grant agreement No 692519. This Joint undertaking receives support from the European Union's Horizon 2020 research and innovation programme and Belgium, Germany, France, Netherlands, Poland, United Kingdom. | |
| dc.identifier.doi | 10.1016/j.sse.2024.108964 | |
| dc.identifier.issn | 0038-1101 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/44762 | |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | |
| dc.source.beginpage | Art. 108964 | |
| dc.source.endpage | N/A | |
| dc.source.issue | September | |
| dc.source.journal | SOLID-STATE ELECTRONICS | |
| dc.source.numberofpages | 4 | |
| dc.source.volume | 219 | |
| dc.subject.keywords | RESISTIVE MEMORY | |
| dc.subject.keywords | FILAMENT | |
| dc.title | Switching layer optimization in Co-based CBRAM for >10 5 memory window in sub-100 µA regime | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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