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Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
Publication:
Extraction of the lightly doped drain concentration of fully depleted SOI NMOSFETs using the back gate bias effect
Date
2000
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nicolett, A. S.
;
Martino, Joao Antonio
;
Simoen, Eddy
;
Claeys, Cor
Journal
Solid-State Electronics
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2070
since deposited on 2021-10-14
2
last month
Acq. date: 2025-12-08
Citations
Metrics
Views
2070
since deposited on 2021-10-14
2
last month
Acq. date: 2025-12-08
Citations