Publication:

A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

Date

2015-06
Proceedings Paper
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dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorChiarella, Thomas
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRosseel, Erik
dc.contributor.authorWaite, Andrew
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorColombeau, Benjamin
dc.contributor.authorChew, Soon Aik
dc.contributor.authorKim, Min-Soo
dc.contributor.authorSchram, Tom
dc.contributor.authorDemuynck, Steven
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T22:34:07Z
dc.date.available2021-10-22T22:34:07Z
dc.date.embargo9999-12-31
dc.date.issued2015-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25864
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7223691
dc.source.beginpage30
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate15/06/2015
dc.source.conferencelocationKyoto Japan
dc.source.endpage31
dc.title

A comparison of arsenic and phosphorus extension by room temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions

dc.typeProceedings paper
dspace.entity.typePublication
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