Publication:

Growth and characterization of mid-infrared InGaAs/InAlAs strained triple quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates

Date

1996
Journal article
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dc.contributor.authorGrietens, Bob
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorVan Daele, Peter
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.date.accessioned2021-09-29T14:31:16Z
dc.date.available2021-09-29T14:31:16Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1239
dc.source.beginpage4177
dc.source.endpage4181
dc.source.issue7
dc.source.journalJournal of Applied Physics
dc.source.volume80
dc.title

Growth and characterization of mid-infrared InGaAs/InAlAs strained triple quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates

dc.typeJournal article
dspace.entity.typePublication
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