High-energy proton irradiation induced changes in the linear-kink noise overschoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Mercha, Abdelkarim
dc.contributor.author	Rafi, Joan Marc
dc.contributor.author	Claeys, Cor
dc.contributor.author	Lukyanchikova, N.B.
dc.contributor.author	Smolanka, A.M.
dc.contributor.author	Garbar, N.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Mercha, Abdelkarim
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Mercha, Abdelkarim::0000-0002-2174-6958
dc.date.accessioned	2021-10-15T16:17:54Z
dc.date.available	2021-10-15T16:17:54Z
dc.date.issued	2004
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/9608
dc.source.beginpage	4084
dc.source.endpage	4092
dc.source.issue	8
dc.source.journal	Journal of Applied Physics
dc.source.volume	95
dc.title	High-energy proton irradiation induced changes in the linear-kink noise overschoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors
dc.type	Journal article
dspace.entity.type	Publication
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