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GaN-on-Si HEMT stress under high electric field condition

Date

2008
Meeting abstract
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dc.contributor.authorMarcon, Denis
dc.contributor.authorLorenz, Anne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-17T08:47:28Z
dc.date.available2021-10-17T08:47:28Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14118
dc.source.beginpage302
dc.source.conferenceInternational Workshop on Nitride Semiconductors - IWN
dc.source.conferencedate6/10/2008
dc.source.conferencelocationMontreux Switzerland
dc.source.endpage302
dc.title

GaN-on-Si HEMT stress under high electric field condition

dc.typeMeeting abstract
dspace.entity.typePublication
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