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Study of Endurance Performance of SiO2 Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO2 Ferroelectric Layer

 
dc.contributor.authorAgarwal, A.
dc.contributor.authorWalke, Amey
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorKao, K. -H.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecWalke, Amey::0000-0001-8406-8122
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2025-07-03T14:13:10Z
dc.date.available2024-06-24T17:51:15Z
dc.date.available2025-07-03T14:13:10Z
dc.date.issued2024
dc.description.wosFundingTextNo Statement Available
dc.identifier.doi10.1109/TED.2024.3409204
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44085
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage4619
dc.source.endpage4625
dc.source.issue8
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages7
dc.source.volume71
dc.subject.keywordsIMPACT
dc.title

Study of Endurance Performance of SiO2 Interfacial Layer Scaling Through O Scavenging in Si Channel n-FeFET With Si:HfO2 Ferroelectric Layer

dc.typeJournal article
dspace.entity.typePublication
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