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Understanding the Role of Shape Imperfections on the Bit Error Rates of STT-MRAM Under External Magnetic Fields

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dc.contributor.authorAhirwar, Sonalie
dc.contributor.authorKumar, Ankit
dc.contributor.authorVan Beek, Simon
dc.contributor.authorArya, Susheel Kumar
dc.contributor.authorLinten, Dimitri
dc.contributor.authorWostyn, Kurt
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorPramanik, Tanmoy
dc.contributor.imecauthorKumar, Ankit
dc.contributor.imecauthorBeek, Simon Van
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecKumar, Ankit::0000-0002-1168-3287
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.date.accessioned2025-08-03T03:58:24Z
dc.date.available2025-08-03T03:58:24Z
dc.date.issued2025-JUL 25
dc.description.wosFundingTextThis work was supported in part by the Science and Engineering Research Board, Government of India, under Grant SRG/2021/000377; in part by the Faculty Initiation Grant, IIT Roorkee; in part by the Supercomputing Facility of IIT Roorkee through the National Supercomputing Mission, Government of India; in part by the Interuniversity Microelectronics Centre (IMEC) Industrial Affiliation Program on Magnetic Random-Access Memory (MRAM) Devices; and in part by the Cyber Security Research Flanders under Grant VR20192203.
dc.identifier.doi10.1109/TED.2025.3589985
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/46018
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage4890
dc.source.endpage4895
dc.source.issue9
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages5
dc.source.volume72
dc.title

Understanding the Role of Shape Imperfections on the Bit Error Rates of STT-MRAM Under External Magnetic Fields

dc.typeJournal article
dspace.entity.typePublication
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