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Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridge RAM under low-current (10μA) operation

Date

2015
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dc.contributor.authorBelmonte, Attilio
dc.contributor.authorFantini, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorHoussa, Michel
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGoux, Ludovic
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorFantini, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecFantini, Andrea::0000-0002-3220-8856
dc.date.accessioned2021-10-22T18:32:32Z
dc.date.available2021-10-22T18:32:32Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24980
dc.source.conferenceE-MRS Spring Meeting Symposium AA: Non-Volatile Memories: Materials, Nanostructures and Integration Approaches
dc.source.conferencedate11/05/2015
dc.source.conferencelocationLille France
dc.title

Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridge RAM under low-current (10μA) operation

dc.typeOral presentation
dspace.entity.typePublication
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