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Integration of GaN power ICs on 200 mm engineered substrates

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dc.contributor.authorLi, Xiangdong
dc.contributor.authorGeens, Karen
dc.contributor.authorWellekens, Dirk
dc.contributor.authorZhao, Ming
dc.contributor.authorMagnani, Alessandro
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorYou, Shuzhen
dc.contributor.authorFahle, Dirk
dc.contributor.authorHahn, Herwig
dc.contributor.authorOdnoblyudov, Vlad
dc.contributor.authorAktas, Ozgur
dc.contributor.authorBasceri, Cem
dc.contributor.authorMarcon, Denis
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorMagnani, Alessandro
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorHahn, Herwig
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecMagnani, Alessandro::0000-0001-6719-7467
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-28T23:56:29Z
dc.date.available2021-10-28T23:56:29Z
dc.date.issued2020
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/35472
dc.source.beginpage241
dc.source.conference2020 International Conference on Compound Semiconductor Manufacturing Technology
dc.source.conferencedate24/05/2020
dc.source.conferencelocationOnline USA
dc.source.endpage244
dc.title

Integration of GaN power ICs on 200 mm engineered substrates

dc.typeProceedings paper
dspace.entity.typePublication
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