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Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density
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Correlation between the Vth-adjustment of nMOSFETs with HfSiO gate oxide and the energy profile of high-k bulk trap density
Date
2010
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Sahhaf, Sahar
;
Degraeve, Robin
;
Srividya, Vidya
;
Kaczer, Ben
;
Gealy, Dan
;
Horiguchi, Naoto
;
Togo, Mitsuhiro
;
Hoffmann, Thomas Y.
;
Groeseneken, Guido
Journal
IEEE Electron Device Letters
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1944
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1944
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations