Publication:

Impact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs

Date

2022
Journal article
https://doi.org/10.1016/j.sse.2022.108318
Simple item page Full metadata Statistics
 
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorMatagne, Philippe
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2023-04-06T13:17:25Z
dc.date.available2022-10-30T02:55:16Z
dc.date.available2023-04-06T13:17:25Z
dc.date.issued2022
dc.identifier.doi10.1016/j.sse.2022.108318
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40651
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 108318
dc.source.endpagena
dc.source.issueAugust
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages4
dc.source.volume194
dc.title

Impact of the channel doping on the low-frequency noise of silicon vertical nanowire pFETs

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles