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High sensitivity photoconductivity based measurement setup for the determination of effective recombination lifetime in silicon wafers

Date

2009
Journal article
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dc.contributor.authorCornagliotti, Emanuele
dc.contributor.authorKang, Xuanwu
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorJohn, Joachim
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.contributor.imecauthorCornagliotti, Emanuele
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-17T21:39:50Z
dc.date.available2021-10-17T21:39:50Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0034-6748
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15127
dc.identifier.urlwww.scitation.com
dc.source.beginpage53906
dc.source.issue5
dc.source.journalReview of Scientific Instruments
dc.source.volume80
dc.title

High sensitivity photoconductivity based measurement setup for the determination of effective recombination lifetime in silicon wafers

dc.typeJournal article
dspace.entity.typePublication
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