Publication:

SRAM with buried power distribution to improve write margin and performance in advanced technology nodes

Date

2019
Journal article
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dc.contributor.authorSalahuddin, Shairfe Muhammad
dc.contributor.authorShaik, Khaja Ahmad
dc.contributor.authorGupta, Anshul
dc.contributor.authorChava, Bharani
dc.contributor.authorGupta, Mohit
dc.contributor.authorWeckx, Pieter
dc.contributor.authorRyckaert, Julien
dc.contributor.authorSpessot, Alessio
dc.contributor.imecauthorSalahuddin, Shairfe Muhammad
dc.contributor.imecauthorGupta, Anshul
dc.contributor.imecauthorGupta, Mohit
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorRyckaert, Julien
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.orcidimecSalahuddin, Shairfe Muhammad::0000-0002-6483-8430
dc.contributor.orcidimecGupta, Mohit::0000-0002-1924-1264
dc.date.accessioned2021-10-27T17:28:45Z
dc.date.available2021-10-27T17:28:45Z
dc.date.issued2019
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33928
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8731977
dc.source.beginpage1261
dc.source.endpage1274
dc.source.issue8
dc.source.journalIEEE Electron Device Letters
dc.source.volume40
dc.title

SRAM with buried power distribution to improve write margin and performance in advanced technology nodes

dc.typeJournal article
dspace.entity.typePublication
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