Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Articles
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
Publication:
Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
Date
2009
Journal article
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
18092.pdf
374.87 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhang, Yan
;
Fischetti, Massimo
;
Soree, Bart
;
Magnus, Wim
;
Heyns, Marc
;
Meuris, Marc
Journal
Journal of Applied Physics
Abstract
Description
Metrics
Views
1953
since deposited on 2021-10-18
430
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations
Metrics
Views
1953
since deposited on 2021-10-18
430
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations