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Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
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Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
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Date
2009
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Zhang, Yan
;
Fischetti, Massimo
;
Soree, Bart
;
Magnus, Wim
;
Heyns, Marc
;
Meuris, Marc
Journal
Journal of Applied Physics
Abstract
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1957
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Acq. date: 2025-12-10
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Views
1957
since deposited on 2021-10-18
1
last month
1
last week
Acq. date: 2025-12-10
Citations