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Substrate RF Losses and Non-linearities in GaN-on-Si HEMT Technology

 
dc.contributor.authorYadav, Sachin
dc.contributor.authorCardinael, Pieter
dc.contributor.authorZhao, Ming
dc.contributor.authorVondkar Kodandarama, Komal
dc.contributor.authorKhaled, Ahmad
dc.contributor.authorRodriguez, Raul
dc.contributor.authorVermeersch, Bjorn
dc.contributor.authorMakovejev, S.
dc.contributor.authorEkoga, E.
dc.contributor.authorPottrain, A.
dc.contributor.authorWaldron, Niamh
dc.contributor.authorRaskin, J.-P.
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorYadav, S.
dc.contributor.imecauthorZhao, M.
dc.contributor.imecauthorVondkar, K.
dc.contributor.imecauthorKhaled, A.
dc.contributor.imecauthorRodriguez, R.
dc.contributor.imecauthorVermeersch, B.
dc.contributor.imecauthorWaldron, N.
dc.contributor.imecauthorParvais, B.
dc.contributor.imecauthorCollaert, N.
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorCardinael, Pieter
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorVondkar Kodandarama, Komal
dc.contributor.imecauthorKhaled, Ahmad
dc.contributor.imecauthorRodriguez, Raul
dc.contributor.imecauthorVermeersch, Bjorn
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecKhaled, Ahmad::0000-0003-2892-3176
dc.contributor.orcidimecRodriguez, Raul::0000-0002-4457-8942
dc.contributor.orcidimecVermeersch, Bjorn::0000-0001-8640-672X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-12-15T11:13:47Z
dc.date.available2021-12-06T02:06:36Z
dc.date.available2021-12-15T11:13:47Z
dc.date.issued2020
dc.identifier.doi10.1109/IEDM13553.2020.9371893
dc.identifier.eisbn978-1-7281-8888-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38551
dc.publisherIEEE
dc.source.beginpage159
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
dc.source.conferencelocationSan Francisco, CA, USA
dc.source.endpage162
dc.source.journalna
dc.source.numberofpages4
dc.title

Substrate RF Losses and Non-linearities in GaN-on-Si HEMT Technology

dc.typeProceedings paper
dspace.entity.typePublication
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