Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling

dc.contributor.author	Scalise, Emilio
dc.contributor.author	Houssa, Michel
dc.contributor.author	Pourtois, Geoffrey
dc.contributor.author	Afanas'ev, Valery
dc.contributor.author	Stesmans, Andre
dc.contributor.imecauthor	Houssa, Michel
dc.contributor.imecauthor	Pourtois, Geoffrey
dc.contributor.imecauthor	Stesmans, Andre
dc.contributor.orcidimec	Houssa, Michel::0000-0003-1844-3515
dc.contributor.orcidimec	Pourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned	2021-10-19T18:30:01Z
dc.date.available	2021-10-19T18:30:01Z
dc.date.embargo	9999-12-31
dc.date.issued	2011
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/19738
dc.source.beginpage	132101
dc.source.issue	13
dc.source.journal	Applied Physics Letters
dc.source.volume	99
dc.title	Inelastic electron tunneling spectroscopy of HfO2 gate stacks: A study based on first-principles modeling
dc.type	Journal article
dspace.entity.type	Publication
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