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A deep level study of high-temperature electron-irradiated n-type Cz silicon

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dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorNeimash, V.
dc.contributor.authorKraitchinskii, A.
dc.contributor.authorKras'ko, M.
dc.contributor.authorTishenko, V.
dc.contributor.authorVoitovich, V.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-15T06:40:05Z
dc.date.available2021-10-15T06:40:05Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8143
dc.source.conferenceGettering and Defect Engineering in Semiconductor Technology - GADEST
dc.source.conferencedate20/09/2003
dc.source.conferencelocationBerlin Germany
dc.title

A deep level study of high-temperature electron-irradiated n-type Cz silicon

dc.typeOral presentation
dspace.entity.typePublication
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