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Physical characterization of high-k HfxAl1-xOy gate dielectrics prepared by ALD
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Physical characterization of high-k HfxAl1-xOy gate dielectrics prepared by ALD
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Date
2011
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Christiano, Verônica
;
Adelmann, Christoph
;
Kellermann, Guinther
;
Verdonck, Patrick
;
Dos Santos Filho, Sebastio G.
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Abstract
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1831
since deposited on 2021-10-19
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Acq. date: 2025-12-15
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Metrics
Views
1831
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-15
Citations