Publication:

200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements

Date

2005
Proceedings Paper
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dc.contributor.authorAkatsu, T.
dc.contributor.authorDeguet, C.
dc.contributor.authorSanchez, L.
dc.contributor.authorRichtarch, C.
dc.contributor.authorAllibert, F.
dc.contributor.authorLetertre, F.
dc.contributor.authorMazure, C.
dc.contributor.authorKernevez, N.
dc.contributor.authorClavelier, L.
dc.contributor.authorLe Royer, C.
dc.contributor.authorHartmann, J.M.
dc.contributor.authorLoup, V.
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorRaskin, G.
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.date.accessioned2021-10-16T00:42:37Z
dc.date.available2021-10-16T00:42:37Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10012
dc.source.beginpage137
dc.source.conferenceProceedings of the IEEE International SOI Conference
dc.source.conferencedate3/10/2005
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage138
dc.title

200 mm Germanium-on-insulator(GeOI) by smart cut technology and recent GeOI MOSFETs achievements

dc.typeProceedings paper
dspace.entity.typePublication
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