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Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cells

Date

2017
Proceedings Paper
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dc.contributor.authorCho, Jinyoun
dc.contributor.authorDebucquoy, Maarten
dc.contributor.authorRecaman Payo, Maria
dc.contributor.authorMalik, Shuja
dc.contributor.authorFilipic, Miha
dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorBearda, Twan
dc.contributor.authorGordon, Ivan
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorCho, Jinyoun
dc.contributor.imecauthorDebucquoy, Maarten
dc.contributor.imecauthorRecaman Payo, Maria
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecDebucquoy, Maarten::0000-0001-5980-188X
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-24T03:28:25Z
dc.date.available2021-10-24T03:28:25Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28029
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S1876610217343394
dc.source.beginpage842
dc.source.conference7th International Conference on Silicon Photovoltaics - SiliconPV
dc.source.conferencedate3/04/2017
dc.source.conferencelocationFreiburg Germany
dc.source.endpage850
dc.title

Contact resistivity reduction on lowly-doped n-type Si using a low workfunction metal and a thin TiOX interfacial layer for doping-free Si solar cells

dc.typeProceedings paper
dspace.entity.typePublication
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