Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy

dc.contributor.author	Lieten, Ruben
dc.contributor.author	Richard, Olivier
dc.contributor.author	Degroote, Stefan
dc.contributor.author	Leys, Maarten
dc.contributor.author	Bender, Hugo
dc.contributor.author	Borghs, Gustaaf
dc.contributor.imecauthor	Lieten, Ruben
dc.contributor.imecauthor	Richard, Olivier
dc.contributor.imecauthor	Bender, Hugo
dc.contributor.imecauthor	Borghs, Gustaaf
dc.contributor.orcidimec	Richard, Olivier::0000-0002-3994-8021
dc.date.accessioned	2021-10-19T15:31:42Z
dc.date.available	2021-10-19T15:31:42Z
dc.date.issued	2011
dc.identifier.issn	0022-0248
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/19300
dc.identifier.url	http://dx.doi.org/10.1016/j.jcrysgro.2010.10.146
dc.source.beginpage	71
dc.source.endpage	75
dc.source.issue	1
dc.source.journal	Journal of Crystal Growth
dc.source.volume	314
dc.title	Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy
dc.type	Journal article
dspace.entity.type	Publication
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