Publication:
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
| dc.contributor.author | Izukashi, K. | |
| dc.contributor.author | Matsubayashi, D. | |
| dc.contributor.author | Belmonte, A. | |
| dc.contributor.author | Kundu, S. | |
| dc.contributor.author | Wan, Y. | |
| dc.contributor.author | Redondo, F. G. | |
| dc.contributor.author | Oh, H. | |
| dc.contributor.author | Sharma, A. | |
| dc.contributor.author | Subhechha, S. | |
| dc.contributor.author | Puliyalil, H. | |
| dc.contributor.author | Chasin, A. | |
| dc.contributor.author | Dekkers, H. | |
| dc.contributor.author | Pavel, A. | |
| dc.contributor.author | Rassoul, N. | |
| dc.contributor.author | Kar, G. S. | |
| dc.contributor.imecauthor | Matsubayashi, D. | |
| dc.contributor.imecauthor | Belmonte, A. | |
| dc.contributor.imecauthor | Kundu, S. | |
| dc.contributor.imecauthor | Wan, Y. | |
| dc.contributor.imecauthor | Redondo, F. G. | |
| dc.contributor.imecauthor | Oh, H. | |
| dc.contributor.imecauthor | Sharma, A. | |
| dc.contributor.imecauthor | Subhechha, S. | |
| dc.contributor.imecauthor | Puliyalil, H. | |
| dc.contributor.imecauthor | Chasin, A. | |
| dc.contributor.imecauthor | Dekkers, H. | |
| dc.contributor.imecauthor | Pavel, A. | |
| dc.contributor.imecauthor | Rassoul, N. | |
| dc.contributor.imecauthor | Kar, G. S. | |
| dc.date.accessioned | 2025-07-14T03:56:26Z | |
| dc.date.available | 2025-07-14T03:56:26Z | |
| dc.date.issued | 2025-JUL | |
| dc.description.wosFundingText | This work was supported in part by the NanoIC Pilot Line of Acquisition and Operation are Jointly Funded by the Chips Joint Undertaking through the European Union's Digital Europe under Grant 101183266, in part by the Horizon Europe programs under Grant 101183277, and in part by the Participating States Belgium (Flanders), France, Germany, Finland, Ireland and Romania. The review of this letter was arranged by Editor S. Yu. | |
| dc.identifier.doi | 10.1109/LED.2025.3564187 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/45904 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 1111 | |
| dc.source.endpage | 1114 | |
| dc.source.issue | 7 | |
| dc.source.journal | IEEE ELECTRON DEVICE LETTERS | |
| dc.source.numberofpages | 4 | |
| dc.source.volume | 46 | |
| dc.title | Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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