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Gate oxide breakdown in FET devices and circuits: from nanoscale physics to system-level reliability
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Gate oxide breakdown in FET devices and circuits: from nanoscale physics to system-level reliability
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Date
2007
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16189.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kaczer, Ben
;
Degraeve, Robin
;
Roussel, Philippe
;
Groeseneken, Guido
Journal
Microelectronics Reliability
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Acq. date: 2025-12-15
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since deposited on 2021-10-16
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Acq. date: 2025-12-15
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Downloads
1
since deposited on 2021-10-16
Acq. date: 2025-12-15
Views
1849
since deposited on 2021-10-16
2
last month
Acq. date: 2025-12-15
Citations