Publication:

Monolithic InGaAs/GaAs multi-QWs DFB nano- ridge laser directly grown on 300 mm Si Wafer

Date

2017
Proceedings Paper
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dc.contributor.authorShi, Yuting
dc.contributor.authorWang, Zhechao
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorKunert, Bernardette
dc.contributor.authorVan Thourhout, Dries
dc.contributor.imecauthorShi, Yuting
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.accessioned2021-10-24T13:27:30Z
dc.date.available2021-10-24T13:27:30Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29428
dc.identifier.urlhttps://doi.org/10.1364/IPRSN.2017.ITu2A.2
dc.source.beginpageITu2A.2
dc.source.conferenceOSA Technical Digest Advanced Photonics (IPR, NOMA, Sensors, Networks, SPPCom, PS)
dc.source.conferencedate24/07/2017
dc.source.conferencelocationNew Orleans, LA USA
dc.title

Monolithic InGaAs/GaAs multi-QWs DFB nano- ridge laser directly grown on 300 mm Si Wafer

dc.typeProceedings paper
dspace.entity.typePublication
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