Publication:

Physical model of low-temperature to cryogenic threshold voltage in MOSFETs

Date

2020
Journal article
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dc.contributor.authorBeckers, Arnout
dc.contributor.authorJaezeri, Farzan
dc.contributor.authorGrill, Alexander
dc.contributor.authorNarasimhamoorthy, Subramanian
dc.contributor.authorParvais, Bertrand
dc.contributor.authorEnz, Christian
dc.contributor.imecauthorBeckers, Arnout
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorNarasimhamoorthy, Subramanian
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.orcidimecBeckers, Arnout::0000-0003-3663-0824
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.date.accessioned2021-10-28T20:16:33Z
dc.date.available2021-10-28T20:16:33Z
dc.date.embargo9999-12-31
dc.date.issued2020
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34720
dc.identifier.urlhttps://ieeexplore.ieee.org/document/9076206
dc.source.beginpage780
dc.source.endpage788
dc.source.journalIEEE Journal of the Electron Devices Society
dc.source.volume8
dc.title

Physical model of low-temperature to cryogenic threshold voltage in MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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