Publication:

Light scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation

Date

1996
Proceedings Paper
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorGräf, D.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorMertens, Paul
dc.contributor.authorLambert, U.
dc.contributor.authorHeyns, Marc
dc.contributor.authorClaeys, Cor
dc.contributor.authorRichter, H.
dc.contributor.authorWagner, P.
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-09-29T15:44:50Z
dc.date.available2021-09-29T15:44:50Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1611
dc.source.beginpage331
dc.source.conferenceDefect Recognition and Image Processing in Semiconductors - DRIP. Proceedings of the 6th International Conference
dc.source.conferencedate3/12/1995
dc.source.conferencelocationBoulder, CO USA
dc.source.endpage336
dc.title

Light scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation

dc.typeProceedings paper
dspace.entity.typePublication
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