Publication:
A Wide-Range Body Biasing Technique for Analog ICs in 22nm FD-SOI Under Total Ionizing Dose Radiation Harsh Environment
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0002-1740-1711 | |
| cris.virtualsource.department | f00f253d-ca86-4aac-afa7-9f9514f86618 | |
| cris.virtualsource.orcid | f00f253d-ca86-4aac-afa7-9f9514f86618 | |
| dc.contributor.author | Zhao, Jinghao | |
| dc.contributor.author | Qing, Yihong | |
| dc.contributor.author | Li, Zheyi | |
| dc.contributor.author | Gao, Bo | |
| dc.contributor.author | Prinzie, Jeffrey | |
| dc.contributor.author | Saigné, Frédéric | |
| dc.contributor.author | Leroux, Paul | |
| dc.date.accessioned | 2026-11-09T14:14:52Z | |
| dc.date.available | 2026-11-09T14:14:52Z | |
| dc.date.issued | 2024 | |
| dc.description.abstract | This paper presents a wide-range body biasing technique for enhancing total ionizing dose (TID) robustness of analog integrated circuits (ICs) in 22nm fully depleted silicon-on-insulator (FD-SOI). A precise SPICE model has been developed to predict the behavior of MOSFETs under TID degradation, based on experimental results from X-ray irradiation tests on a test vehicle fabricated in 22nm FD-SOI. From the simulation in an electronic design automation (EDA) tool, the performance of a bootstrap switch and operational amplifier (OPAMP) with the proposed body biasing configuration exhibit strong TID irradiation robustness. | |
| dc.identifier.doi | 10.1109/radecs61970.2024.11298604 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/60777 | |
| dc.provenance.editstepuser | greet.vanhoof@imec.be | |
| dc.publisher | IEEE | |
| dc.source.beginpage | 1 | |
| dc.source.conference | 24th European Conference on Radiation and Its Effects on Components and Systems (RADECS) | |
| dc.source.conferencedate | 2024-09-16 | |
| dc.source.conferencelocation | Maspalomas | |
| dc.source.endpage | 4 | |
| dc.source.journal | 24th European Conference on Radiation and Its Effects on Components and Systems (RADECS) | |
| dc.source.numberofpages | 4 | |
| dc.title | A Wide-Range Body Biasing Technique for Analog ICs in 22nm FD-SOI Under Total Ionizing Dose Radiation Harsh Environment | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| imec.internal.crawledAt | 2025-12-24 | |
| imec.internal.source | crawler | |
| Files | Original bundle
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