Publication:

InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications

Date

2024
Proceedings Paper
https://doi.org/10.1109/ESSERC62670.2024.10719459
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dc.contributor.authorElKashlan, Rana
dc.contributor.authorYu, Hao
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorYadav, Sachin
dc.contributor.authorKazemi Esfeh, Babak
dc.contributor.authorAlian, AliReza
dc.contributor.authorBanerjee, Sourish
dc.contributor.authorXiao, Dongping
dc.contributor.authorParvais, Bertrand
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorElKashlan, Rana
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorPeralagu, Uthayasankaran
dc.contributor.imecauthorYadav, Sachin
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBanerjee, Sourish
dc.contributor.imecauthorXiao, Dongping
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorKazemi Esfeh, Babak
dc.contributor.orcidimecElKashlan, Rana::0000-0003-0576-4344
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecPeralagu, Uthayasankaran::0000-0001-9166-4408
dc.contributor.orcidimecYadav, Sachin::0000-0003-4530-2603
dc.contributor.orcidimecAlian, AliReza::0000-0003-3463-416X
dc.contributor.orcidimecBanerjee, Sourish::0000-0002-4124-7881
dc.contributor.orcidimecXiao, Dongping::0000-0002-7581-870X
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecKazemi Esfeh, Babak::0009-0007-5368-306X
dc.date.accessioned2025-04-10T14:27:38Z
dc.date.available2025-02-02T17:54:29Z
dc.date.available2025-04-10T14:27:38Z
dc.date.issued2024
dc.identifier.doi10.1109/ESSERC62670.2024.10719459
dc.identifier.eisbn979-8-3503-8813-8
dc.identifier.isbn979-8-3503-8814-5
dc.identifier.issn1930-8833
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45148
dc.publisherIEEE
dc.source.beginpage241
dc.source.conference50th IEEE European Solid-State Electronics Research Conference (ESSERC)
dc.source.conferencedateSEP 09-12, 2024
dc.source.conferencelocationBruges
dc.source.endpage244
dc.source.journalN/A
dc.source.numberofpages4
dc.title

InAlN/GaN-on-Si HEMTs with an InGaN Back Barrier for mm-Wave Applications

dc.typeProceedings paper
dspace.entity.typePublication
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