Publication:

Perpendicular magnetic tunnel junction stacks with high annealing tolerance for high density memory applications

Date

2017
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorSwerts, Johan
dc.contributor.authorCouet, Sebastien
dc.contributor.authorLiu, Enlong
dc.contributor.authorMertens, Sofie
dc.contributor.authorLin, Tsann
dc.contributor.authorRao, Siddharth
dc.contributor.authorKim, Woojin
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorFurnemont, Arnaud
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorSwerts, Johan
dc.contributor.imecauthorCouet, Sebastien
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorRao, Siddharth
dc.contributor.imecauthorKim, Woojin
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecCouet, Sebastien::0000-0001-6436-9593
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.contributor.orcidimecRao, Siddharth::0000-0001-6161-3052
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.accessioned2021-10-24T14:32:32Z
dc.date.available2021-10-24T14:32:32Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29532
dc.source.conferenceYork-Tohoku-Kaiserslautern Research Symposium on New-Concept Spintronics Devices
dc.source.conferencedate21/06/2017
dc.source.conferencelocationYork UK
dc.title

Perpendicular magnetic tunnel junction stacks with high annealing tolerance for high density memory applications

dc.typeMeeting abstract
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions