Publication:
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
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1940 since deposited on 2021-10-23
2last month
Acq. date: 2025-12-10
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1940 since deposited on 2021-10-23
2last month
Acq. date: 2025-12-10
Citations