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Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70 - 85% Ge
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Smooth and high quality epitaxial strained Ge grown on SiGe strain relaxed buffers with 70 - 85% Ge
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Date
2010-05
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Loo, Roger
;
Souriau, Laurent
;
Ong, Patrick
;
Kenis, Karine
;
Rip, Jens
;
Storck, Peter
;
Buschhardt, Thomas
;
Vorderwester, Martin
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1910
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations
Metrics
Views
1910
since deposited on 2021-10-18
Acq. date: 2025-12-15
Citations