Publication:

Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes

Date

2016
Proceedings Paper
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dc.contributor.authorGao, R.
dc.contributor.authorJi, Zhigang
dc.contributor.authorHatta, S.M.
dc.contributor.authorZhang, J.F.
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorZhang, W.
dc.contributor.authorDuan, M.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorBi, J.
dc.contributor.authorLiu, M.
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-23T10:54:37Z
dc.date.available2021-10-23T10:54:37Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26639
dc.source.beginpage778
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate5/12/2016
dc.source.conferencelocationSan Francisco CA USA
dc.source.endpage781
dc.title

Predictive As-grown-generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes

dc.typeProceedings paper
dspace.entity.typePublication
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