Publication:

A 3D buffer memory for AI and machine learning

Date

2025
Editorial Material
https://doi.org/10.1038/s44287-024-00138-2
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-3663-7439
cris.virtualsource.department907474d7-b288-4cda-ae3b-769a18d335fa
cris.virtualsource.orcid907474d7-b288-4cda-ae3b-769a18d335fa
dc.contributor.authorRosmeulen, Maarten
dc.date.accessioned2026-05-28T08:54:51Z
dc.date.available2026-05-28T08:54:51Z
dc.date.createdwos2025-12-02
dc.date.issued2025
dc.description.abstractThe recent introduction of the compute express link (CXL) memory interface provides opportunities for new memories to complement dynamic random-access memory (DRAM) in data-intensive compute applications. Research at imec shows that a 3D-integrated charge-coupled-device (CCD)-based memory with IGZO conduction channel is an excellent candidate.
dc.identifier.doi10.1038/s44287-024-00138-2
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59458
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherSPRINGERNATURE
dc.source.beginpage75
dc.source.endpage76
dc.source.issue2
dc.source.journalNATURE REVIEWS ELECTRICAL ENGINEERING
dc.source.numberofpages2
dc.source.volume2
dc.title

A 3D buffer memory for AI and machine learning

dc.typeEditorial material
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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