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Solid-source doping by using phospho-silicate glass into P-type bulk Si (100) substrate: role of the capping SiO2 barrier

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dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorPeter, Antony
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorPawlak, Bartek
dc.contributor.authorEyben, Pierre
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Anda
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-25T21:02:16Z
dc.date.available2021-10-25T21:02:16Z
dc.date.issued2018
dc.identifier.issn1071-1023
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31056
dc.identifier.urlhttps://doi.org/10.1116/1.5053455
dc.source.beginpage061205-1
dc.source.endpage061205-4
dc.source.issue6
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.volume36
dc.title

Solid-source doping by using phospho-silicate glass into P-type bulk Si (100) substrate: role of the capping SiO2 barrier

dc.typeJournal article
dspace.entity.typePublication
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