Publication:

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

Date

1996
Journal article
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dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorMaes, Herman
dc.contributor.authorVan Bavel, Mieke
dc.contributor.authorLangouche, G.
dc.contributor.authorStesmans, Andre
dc.contributor.authorClauws, P.
dc.contributor.imecauthorVan Bavel, Mieke
dc.contributor.imecauthorStesmans, Andre
dc.date.accessioned2021-09-29T15:33:07Z
dc.date.available2021-09-29T15:33:07Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1538
dc.source.beginpage196
dc.source.endpage199
dc.source.journalMaterials Science and Engineering B
dc.source.volume36
dc.title

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

dc.typeJournal article
dspace.entity.typePublication
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