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Experimental quantification of the robustness of adiabatic rapid passage for quantum state inversion in semiconductor quantum dots

Date

2021
Journal article
https://doi.org/10.1364/OE.435109
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dc.contributor.authorRamachandran, A.
dc.contributor.authorFraser-Leach, J.
dc.contributor.authorO'Neal, Sabine
dc.contributor.authorDeppe, D. G.
dc.contributor.authorHall, K. C.
dc.contributor.imecauthorO'Neal, Sabine
dc.date.accessioned2022-01-04T10:56:52Z
dc.date.available2021-12-23T02:06:13Z
dc.date.available2022-01-04T10:56:52Z
dc.date.issued2021
dc.identifier.doi10.1364/OE.435109
dc.identifier.issn1094-4087
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38656
dc.publisherOPTICAL SOC AMER
dc.source.beginpage41766
dc.source.endpage41775
dc.source.issue25
dc.source.journalOPTICS EXPRESS
dc.source.numberofpages10
dc.source.volume29
dc.subject.keywordsDECOHERENCE
dc.subject.keywordsPHOTONS
dc.title

Experimental quantification of the robustness of adiabatic rapid passage for quantum state inversion in semiconductor quantum dots

dc.typeJournal article
dspace.entity.typePublication
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