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The impact of the drain saturation voltage on the multiplication current modeling of MOSFETs at liquid helium temperatures

Date

2001
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, C.
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T17:50:01Z
dc.date.available2021-10-14T17:50:01Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5657
dc.source.conference200th Meeting of the Electrochemical Society: 6th International Symposium on Low Temperature Electronics
dc.source.conferencedate2/09/2001
dc.source.conferencelocationSan Francisco, CA USA
dc.title

The impact of the drain saturation voltage on the multiplication current modeling of MOSFETs at liquid helium temperatures

dc.typeMeeting abstract
dspace.entity.typePublication
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