Publication:

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

Date

2015-10
Journal article
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dc.contributor.authorWang, Ruijun
dc.contributor.authorSprengel, Stephan
dc.contributor.authorMuneeb, Muhammad
dc.contributor.authorBoehm, G.
dc.contributor.authorBaets, Roel
dc.contributor.authorAmann, M.K.
dc.contributor.authorRoelkens, Gunther
dc.contributor.imecauthorMuneeb, Muhammad
dc.contributor.imecauthorBaets, Roel
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2021-10-23T00:51:52Z
dc.date.available2021-10-23T00:51:52Z
dc.date.embargo9999-12-31
dc.date.issued2015-10
dc.identifier.issn1094-4087
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26159
dc.identifier.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-23-20-26834&origin=search
dc.source.beginpage26834
dc.source.endpage26841
dc.source.issue20
dc.source.journalOptics Express
dc.source.volume23
dc.title

2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits

dc.typeJournal article
dspace.entity.typePublication
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