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650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fab
Publication:
650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fab
Date
2017
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kim, J.-Y.
;
Lee, D.
;
Kim, Y.S.
;
Son, J.
;
Luo, W.
;
Decoutere, Stefaan
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1985
since deposited on 2021-10-24
Acq. date: 2025-10-24
Citations
Metrics
Views
1985
since deposited on 2021-10-24
Acq. date: 2025-10-24
Citations