Publication:

Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

Date

2025-MAR-APR
Journal article
https://doi.org/10.1109/JSTQE.2024.3415674
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dc.contributor.authorZenari, Michele
dc.contributor.authorBuffolo, Matteo
dc.contributor.authorRampazzo, Fabiana
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorRossi, Francesca
dc.contributor.authorLazzarini, Laura
dc.contributor.authorGoyvaerts, Jeroen
dc.contributor.authorGrabowski, Alexander
dc.contributor.authorGustavsson, Johan S.
dc.contributor.authorBaets, Roel
dc.contributor.authorLarsson, Anders
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorMeneghini, Matteo
dc.contributor.imecauthorBaets, Roel
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2024-09-18T18:03:10Z
dc.date.available2024-09-18T18:03:10Z
dc.date.issued2025-MAR-APR
dc.identifier.doi10.1109/JSTQE.2024.3415674
dc.identifier.issn1077-260X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44519
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.issue2
dc.source.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
dc.source.numberofpages9
dc.source.volume31
dc.title

Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

dc.typeJournal article
dspace.entity.typePublication
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