Publication:

Passivation of InGaAs surface by ammonium sulfide vapor treatment

Date

2011
Proceedings Paper
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dc.contributor.authorAlian, AliReza
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMerckling, Clement
dc.contributor.authorFirrincieli, Andrea
dc.contributor.authorWang, Wei-E
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorFirrincieli, Andrea
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-19T12:28:44Z
dc.date.available2021-10-19T12:28:44Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18465
dc.source.conferenceIEEE Semiconductor Interface Specialist Conference - SISC
dc.source.conferencedate30/11/2011
dc.source.conferencelocationWashington, DC USA
dc.title

Passivation of InGaAs surface by ammonium sulfide vapor treatment

dc.typeProceedings paper
dspace.entity.typePublication
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