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A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling

Date

2007-01
Proceedings Paper
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dc.contributor.authorChauhan, Y.
dc.contributor.authorKrummenacher, F.
dc.contributor.authorAnghel, C.
dc.contributor.authorGillon, R.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDeclercq, M.
dc.contributor.authorIonescu, A.
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2021-10-16T15:15:12Z
dc.date.available2021-10-16T15:15:12Z
dc.date.embargo9999-12-31
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11842
dc.source.beginpage177
dc.source.conference20th International Conference on VLSI Design
dc.source.conferencedate6/01/2007
dc.source.conferencelocationBangalore India
dc.source.endpage182
dc.title

A new charge based compact model for lateral asymmetric MOSFET and its application to high voltage MOSFET modeling

dc.typeProceedings paper
dspace.entity.typePublication
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