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Creation and dissolution of oxygen related defects in czochralski grown silicon treated at high pressures - high temperatures

Date

1995
Proceedings Paper
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dc.contributor.authorMisiuk, A.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorClaeys, Cor
dc.contributor.authorHartwig, J.
dc.contributor.authorPrieur, E.
dc.contributor.authorDatsenko, L.
dc.contributor.authorKhrupa, V.
dc.contributor.authorAntonova, I. V.
dc.contributor.authorBak-Misiuk, J.
dc.date.accessioned2021-09-29T13:11:27Z
dc.date.available2021-09-29T13:11:27Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/768
dc.source.beginpage328
dc.source.conferenceApplied Crystallography. Proceedings of the XVI Conference
dc.source.conferencedate22/08/1994
dc.source.conferencelocationCieszyn Poland
dc.source.endpage331
dc.title

Creation and dissolution of oxygen related defects in czochralski grown silicon treated at high pressures - high temperatures

dc.typeProceedings paper
dspace.entity.typePublication
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