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Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n+InAs/p+GaSb NW tunneling devices
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Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n+InAs/p+GaSb NW tunneling devices
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Date
2018-11
Journal article
https://doi.org/10.1063/1.5049900
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
El Kazzi, Salim
;
Alian, AliReza
;
Hsu, Brent
;
Favia, Paola
;
Merckling, Clement
;
Lu, Wenjie
;
Del Alamo, Jesus
;
Collaert, Nadine
Journal
Journal of Applied Physics
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1931
since deposited on 2021-10-25
Acq. date: 2025-12-10
Citations
Metrics
Views
1931
since deposited on 2021-10-25
Acq. date: 2025-12-10
Citations