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Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
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Growth and characterization of buffer structures for AlGaN/GaN-based heterostructure field effect transistors
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Eickelkamp, Martin
;
Fahle, Dirk
;
Mauder, Christof
;
Saripalli, Yoga
;
Zhao, Ming
;
Liang, Hu
;
Kandaswamy, Prem Kumar
;
Posthuma, Niels
;
Heuken, Michael
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1982
since deposited on 2021-10-23
2
last month
Acq. date: 2025-12-09
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1982
since deposited on 2021-10-23
2
last month
Acq. date: 2025-12-09
Citations