Publication:

Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

Date

2017
Journal article
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dc.contributor.authorDuan, Meng
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorJi, Zhigang
dc.contributor.authorZhang, Wei Dong
dc.contributor.authorKaczer, Ben
dc.contributor.authorAsenov, Asen
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-24T04:28:06Z
dc.date.available2021-10-24T04:28:06Z
dc.date.issued2017
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28281
dc.identifier.urlhttp://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7912321
dc.source.beginpage2478
dc.source.endpage2484
dc.source.issue6
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume64
dc.title

Key issues and solutions for characterizing hot carrier aging of nanometer scale nMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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