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Real-Time MOSFET Condition Monitoring for Variable Mission Profiles With a Dual Extended Kalman Filter

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
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cris.virtual.orcid0000-0002-9221-4932
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cris.virtualsource.department6135dbc2-f1c6-4a89-ab31-0608a53994c6
cris.virtualsource.department5d22889d-a568-4860-af79-f9efe51000b4
cris.virtualsource.orcid6135dbc2-f1c6-4a89-ab31-0608a53994c6
cris.virtualsource.orcid5d22889d-a568-4860-af79-f9efe51000b4
dc.contributor.authorDeckers, Martijn
dc.contributor.authorVan Cappellen, Leander
dc.contributor.authorMoschner, Jens
dc.contributor.authorDaenen, Michaël
dc.contributor.authorDriesen, Johan
dc.contributor.imecauthorVan Cappellen, Leander
dc.contributor.imecauthorDaenen, Michael
dc.date.accessioned2024-12-31T16:56:43Z
dc.date.available2024-12-31T16:56:43Z
dc.date.issued2025
dc.description.abstractThe article proposes a methodology to detect real-time power mosfet degradation, in variable mission profile applications, using externally measurable electrical parameters. This complements the work done for fixed operation conditions in current literature. To achieve this, the damage and temperature sensitive drain to source resistance is accompanied with a gate resistance measurement only sensitive to temperature. Together, they allow for the detection of, and the distinction between, bond wire and die attach solder layer degradation. A dual extended Kalman filter is used to filter the measurement data and to estimate the change in thermal model. The article shows the measurement circuits together with proof of concept lab results in a solar photovoltaic use case. The main aim is to show that the resistance measurement can be compensated for mission profile temperature variations and that the thermal resistance can be estimated, reflecting bond wire and die attach solder layer degradation.
dc.description.wosFundingTextThis work was supported by the Flanders Innovation & Entrepreneurship and Flux50 under project DAPPER under Grant HBC.2020.2144. The work of Martijn Deckers was supported by a Ph.D. grant from the Research Foundation Flanders (FWO) under Grant 1S87522N.Recommended for publication by Associate Editor H. Luo.
dc.identifier.doi10.1109/TPEL.2024.3480704
dc.identifier.issn0885-8993
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45028
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2219
dc.source.endpage2234
dc.source.issue1
dc.source.journalIEEE TRANSACTIONS ON POWER ELECTRONICS
dc.source.numberofpages16
dc.source.volume40
dc.subject.keywordsPOWER
dc.subject.keywordsTEMPERATURE
dc.subject.keywordsFAILURE
dc.subject.keywordsMODULES
dc.title

Real-Time MOSFET Condition Monitoring for Variable Mission Profiles With a Dual Extended Kalman Filter

dc.typeJournal article
dspace.entity.typePublication
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