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Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

Date

2010
Meeting abstract
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dc.contributor.authorCui, Hushan
dc.contributor.authorVan Hoof, Rita
dc.contributor.authorSeveri, Simone
dc.contributor.authorWitvrouw, Ann
dc.contributor.authorKnoops, An
dc.contributor.authorDelande, Tinne
dc.contributor.authorPancken, Joris
dc.contributor.authorClaes, Martine
dc.contributor.imecauthorVan Hoof, Rita
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDelande, Tinne
dc.contributor.imecauthorPancken, Joris
dc.contributor.imecauthorClaes, Martine
dc.date.accessioned2021-10-18T15:44:22Z
dc.date.available2021-10-18T15:44:22Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16923
dc.source.beginpage2333
dc.source.conference218th ECS Meeting Symposium J3: Microfabricated and Nanofabricated Systems for MEMS/NEMS 9
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
dc.title

Wafer level characterization of the sacrificial HDP oxide lateral etching by anhydrous vapor HF with ethanol vapor for SiGe MEMS structures

dc.typeMeeting abstract
dspace.entity.typePublication
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